Publications
7593 publications
Silicon molecular beam epitaxy
F.W. Saris, T. Jong, Silicon molecular beam epitaxy, (1985)
Reaction of amourphous and crystalline alloys with silicon
L.S. Hung, S.Q. Wang, J.W. Mayer, F.W. Saris, Reaction of amourphous and crystalline alloys with silicon, (1985)
E-beam evaporated multilayer soft X-ray coatings, analyzed with CuKa radiation
M.P. Bruijn, S. Chakraborty, H.W. Essen, J. Verhoeven, M.J. Wiel, E-beam evaporated multilayer soft X-ray coatings, analyzed with CuKa radiation, (1985)
Stability of amorphous Cu/Ta and Cu/W alloys
M. Nastasi, F.W. Saris, L.S. Hung, J.W. Mayer, Stability of amorphous Cu/Ta and Cu/W alloys, J. Appl. Phys. 58, 3052-3057, (1985)
The use of a pulsed laser for shallow-junction processing
W.C. Sinke, A. Polman, W.G.J.H.M. Sark, F.W. Saris, The use of a pulsed laser for shallow-junction processing, (1985)
Electron and ion beam activated solid phase epitaxy of ion-implanted silicon
M. Miyao, A. Polman, R. Kemp, J.F.M. Westendorp, W.C. Sinke, J.F. Veen, F.W. Saris, Electron and ion beam activated solid phase epitaxy of ion-implanted silicon, (1985)
Ion beam crystallography of surfaces and interfaces
J.F. Veen, Ion beam crystallography of surfaces and interfaces, Surf. Sci. Rep. 5, 199-288, (1985)
State-selective electron capture in C3+-H, H2 collisions (0.7-4.6 keV amu-1) studied by photon spectroscopy
D. Ciric, A. Brazuk, D. Dijkkamp, F.J. Heer, H. Winter, State-selective electron capture in C3+-H, H2 collisions (0.7-4.6 keV amu-1) studied by photon spectroscopy, J. Phys. B: At., Mol. Opt. Phys. 18, 3629-3639, (1985)
A model for the stationary cesium coverage on a converter surface in a cesium seeded hydrogen discharge
P.W. Amersfoort, C.T. Ying, E.H.A. Granneman, A model for the stationary cesium coverage on a converter surface in a cesium seeded hydrogen discharge, J. Appl. Phys. 58, 2317-2325, (1985)
Subshell-selective electron capture from lithium by slow multiply charged ions
A. Brazuk, H. Winter, D. Dijkkamp, F.J. Heer, A.G. Drentje, Subshell-selective electron capture from lithium by slow multiply charged ions, Nucl. Instrum. Methods Phys. Res., Sect B 9, 442-447, (1985)
The formation of a negative hydrogen ion beam by surface conversion of a positive ion beam on cesiated tungsten surfaces
P.J.M. Bommel, J.H.M. Bonnie, E.H.A. Granneman, P. Massmann, H.J. Hopman, The formation of a negative hydrogen ion beam by surface conversion of a positive ion beam on cesiated tungsten surfaces, J. Appl. Phys. 58, 2492-2502, (1985)
High-temperature SiO2 decomposition at the SiO2/Si interface
R.M. Tromp, G.W. Rubloff, P. Balk, F.K. LeGoues, E.J. Loenen, High-temperature SiO2 decomposition at the SiO2/Si interface, Phys. Rev. Lett. 55, 2332-2335, (1985)
Low ion acceleration with the FOM Meqalac-system
R.W. Thomae, F. Siebenlist, P.W. Amersfoort, F.G. Schonewille, E.H.A. Granneman, Low ion acceleration with the FOM Meqalac-system, IEEE Trans. Nuclear Sci. 32, 3172-3174, (1985)
Toepassingen van een diode-array detektor in spectroscopische experimenten
A.N. Buijserd, H.C. Gerritsen, P.G. Kistemaker, Toepassingen van een diode-array detektor in spectroscopische experimenten, Ned. Tijdschr. Fot., 4-14, (1985)
Selective electron capture into He P(n, l) subshells in collisions of He2+ with atomic and molecular hydrogen
D. Ciric, D. Dijkkamp, E. Vlieg, F.J. Heer, Selective electron capture into He P(n, l) subshells in collisions of He2+ with atomic and molecular hydrogen, J. Phys. B: At., Mol. Opt. Phys. 18, 4745-4762, (1985)
Formation of negative hydrogen ions on a cesiated W(110) surface: the influence of hydrogen implantation
P.W. Amersfoort, J.J.C. Geerlings, L.F.Tz. Kwakman, A. Hershcovitch, E.H.A. Granneman, J.H. Los, Formation of negative hydrogen ions on a cesiated W(110) surface: the influence of hydrogen implantation, J. Appl. Phys. 58, 3566-3572, (1985)
Quasi-Lorentzian diffusion of D2 and HD in noble gases
A.S.M. Wahby, Quasi-Lorentzian diffusion of D2 and HD in noble gases, Physica C 133, 93-101, (1985)
Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions
J. Dieleman, F.H.M. Sanders, A.W. Kolfschoten, P.C. Zalm, A.E. Vries, R.A. Haring, Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions, J. Vac. Sci. Technol. B 3, 1384-1392, (1985)
Angular scattering in dissociative collisions of ionized acetone with helium
W.J. Zande, D.P. Bruijn, J.H. Los, P.G. Kistemaker, Angular scattering in dissociative collisions of ionized acetone with helium, Int. J. Mass Spectrom. Ion Processes 67, 161-170, (1985)
Silicon strained layers grown on GaP(001) by molecular beam epitaxy
P.M.J. Marée, R.I.J. Olthof, J.W.M. Frenken, J.F. Veen, C.W.T. Bulle-Lieuwma, M.P.A. Viegers, P.C. Zalm, Silicon strained layers grown on GaP(001) by molecular beam epitaxy, J. Appl. Phys. 58, 3097-3103, (1985)